@misc{indiciaeaa65edd6017b,
  title = {Physics-based Full-band GaN High-Electron-Mobility Transistor Simulation Suggests Upper Bound of LO Phonon Lifetime},
  author = {Ankan Ghosh Dastider and Matt Grupen and Ashwin Tunga and Shaloo Rakheja},
  year = {2026},
  url = {https://arxiv.org/abs/2512.06226},
  note = {Source identifier: 2512.06226}
}