@misc{indiciae0d54270e0316,
  title = {Physics Guided Exponential Model Design of High Ge Content SiGe Selective Epitaxy for Gate All Around Source/Drain Applications},
  author = {Zhigang Li and Guobin Bai and Hengwei Cui and Wenlong Yao and Jianfeng Gao and Qifeng Jiang and Junjie Li and Junfeng Li and Yongliang Li and Huaxiang Yin and Xiaolei Wang and Jun Luo},
  year = {2026},
  url = {https://arxiv.org/abs/2602.07925},
  note = {Source identifier: 2602.07925}
}