TY  - RPRT
TI  - Sequential Quenching to Predict Semiconductor Defect Concentrations from Formation & Migration Energies: The Case of CdTe:As Doping
AU  - Khandakar Aaditta Arnab
AU  - Intuon Chatratin
AU  - Anderson Janotti
AU  - Michael Scarpulla
PY  - 2026
DO  - 10.1039/d6tc00828c
UR  - https://arxiv.org/abs/2603.14618
ID  - 2603.14618
ER  -