@misc{indiciae023287bcded8,
  title = {Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer},
  author = {K. Fan and S. V. Beek and G. Talmelli and V. Kateel and D. Giuliano and B. Vermeulen and K. Cai and B. Sorée and J. D. Boeck and R. Carpenter and S. Rao and S. Couet and V. D. Nguyen and G. S. Kar},
  year = {2026},
  doi = {10.1063/5.0289550},
  url = {https://arxiv.org/abs/2604.00839},
  note = {Source identifier: 2604.00839}
}