@misc{indiciaea94b55016eba,
  title = {Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics},
  author = {D. Gogova and D. Tran and V. Stanishev and D. Shafizadeh and C. -L. Hsiao and M. Kim and B. Pécz and A. Kovács and K. Frey and A. Sulyok and N. K. Singh and A. Le Febvrier and P. Eklund and V. Darakchieva},
  year = {2026},
  url = {https://arxiv.org/abs/2604.04508},
  note = {Source identifier: 2604.04508}
}