@misc{indiciaee8dc717d4b28,
  title = {Measurements and simulations of X-ray radiation damage effects on CNM n-type 4H-SiC MOS capacitors},
  author = {Khaoula Aouadj and Alessandro Fondacci and Arianna Morozzi and Daniele Passeri and Tommaso Croci and Sebastian Alexander Onder and Daniel Radmanovac and Thomas Bergauer and Serena Mattiazzo and Francesco Moscatelli},
  year = {2026},
  url = {https://arxiv.org/abs/2605.29375},
  note = {Source identifier: 2605.29375}
}