@misc{indiciaeee7b119989fa,
  title = {AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2},
  author = {Seungheon Shin and Jonathan Pratt and Joe McGlone and Yinxuan Zhu and Brianna A. Klein and Andrew Armstrong and Andrew A. Allerman and Siddharth Rajan},
  year = {2026},
  url = {https://arxiv.org/abs/2606.02954},
  note = {Source identifier: 2606.02954}
}