TY  - RPRT
TI  - AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2
AU  - Seungheon Shin
AU  - Jonathan Pratt
AU  - Joe McGlone
AU  - Yinxuan Zhu
AU  - Brianna A. Klein
AU  - Andrew Armstrong
AU  - Andrew A. Allerman
AU  - Siddharth Rajan
PY  - 2026
UR  - https://arxiv.org/abs/2606.02954
ID  - 2606.02954
ER  -