@misc{indiciae07f5e8eea48d,
  title = {Wafer-scale Demonstration of High-voltage beta-Ga2O3 MOSFETs with Excellent Uniformity and over 3kV Breakdown Voltages},
  author = {Ningtao Liu and Hengrui Zhang and Shujun Zhu and Zhihao Yan and Dongyang Han and Shen Hu and Li Ji and Ning Xia and Jichun Ye and Wenrui Zhang},
  year = {2026},
  url = {https://arxiv.org/abs/2606.07973},
  note = {Source identifier: 2606.07973}
}