@misc{indiciaeff8c0360d350,
  title = {What enables GaOx as hole transport layer for a 16 percent 1.0 eV CuInSe2 Bottom Cells with VOC above 550 mV?},
  author = {Francesco Lodola and Zhuangyi Zhou and Boaz Koren and Saeed Bayat and Alessandro Magon and Yucheng Hu and Adrian-Marie Philippe and Michele Melchiorre and Hasan Arif Yetkin and Gunnar Kusch and Nathalie Valle and Rachel A. Oliver and Susanne Siebentritt},
  year = {2026},
  url = {https://arxiv.org/abs/2606.31923},
  note = {Source identifier: 2606.31923}
}