@misc{indiciaecc6a7d193708,
  title = {Reducing the Gate-Induced Drain-Leakage Current of Carbon-Nanotube Transistors by Subliming Dispersants with Back-End-of-Line Compatible Temperature},
  author = {Takumi Inaba and Yuichi Kato and Yoko Iizumi and Yasuhiko Fujita and Kazufumi Kobashi and Takahiro Morimoto and Toshiya Okazaki},
  year = {2026},
  url = {https://arxiv.org/abs/2609.13583},
  note = {Source identifier: 2609.13583}
}