TY  - RPRT
TI  - Reducing the Gate-Induced Drain-Leakage Current of Carbon-Nanotube Transistors by Subliming Dispersants with Back-End-of-Line Compatible Temperature
AU  - Takumi Inaba
AU  - Yuichi Kato
AU  - Yoko Iizumi
AU  - Yasuhiko Fujita
AU  - Kazufumi Kobashi
AU  - Takahiro Morimoto
AU  - Toshiya Okazaki
PY  - 2026
UR  - https://arxiv.org/abs/2609.13583
ID  - 2609.13583
ER  -