TY  - RPRT
TI  - Influence of chemical vapor deposition conditions on N incorporation ratio on vicinal 4H-SiC(000-1) surface: Ab Initio-based approach
AU  - Wataru Ota
AU  - Akira Kusaba
AU  - Yoshihiro Kangawa
AU  - Keisuke Kurashima
AU  - Ichiro Mizushima
AU  - Kenji Shiraishi
PY  - 2026
UR  - https://arxiv.org/abs/2609.28891
ID  - 2609.28891
ER  -