@misc{indiciaeea023c516358,
  title = {Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge},
  author = {Michio Watanabe and Kohei M. Itoh and Youiti Ootuka and Eugene E. Haller},
  year = {2000},
  doi = {10.1103/physrevb.62.r2255},
  url = {https://arxiv.org/abs/cond-mat/0005320},
  note = {Source identifier: cond-mat/0005320}
}