TY  - RPRT
TI  - Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge
AU  - Michio Watanabe
AU  - Kohei M. Itoh
AU  - Youiti Ootuka
AU  - Eugene E. Haller
PY  - 2000
DO  - 10.1103/physrevb.62.r2255
UR  - https://arxiv.org/abs/cond-mat/0005320
ID  - cond-mat/0005320
ER  -