@misc{indiciaeb3dd77afcf3f,
  title = {Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction},
  author = {H. T. Johnson-Steigelman and A. V. Brinck and P. F. Lyman},
  year = {2002},
  url = {https://arxiv.org/abs/cond-mat/0202328},
  note = {Source identifier: cond-mat/0202328}
}