TY  - RPRT
TI  - Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction
AU  - H. T. Johnson-Steigelman
AU  - A. V. Brinck
AU  - P. F. Lyman
PY  - 2002
UR  - https://arxiv.org/abs/cond-mat/0202328
ID  - cond-mat/0202328
ER  -