TY  - RPRT
TI  - First-principles theoretical evaluation of crystalline zirconia and hafnia as gate oxides for Si microelectronics
AU  - V. Fiorentini
AU  - G. Gulleri
PY  - 2002
DO  - 10.1103/physrevlett.89.266101
UR  - https://arxiv.org/abs/cond-mat/0208149
ID  - cond-mat/0208149
ER  -