@misc{indiciae24bc9d142f8b,
  title = {Atomically precise placement of single dopants in Si},
  author = {S. R. Schofield and N. J. Curson and M. Y. Simmons and F. J. Ruess and T. Hallam and L. Oberbeck and R. G. Clark},
  year = {2003},
  doi = {10.1103/physrevlett.91.136104},
  url = {https://arxiv.org/abs/cond-mat/0307599},
  note = {Source identifier: cond-mat/0307599}
}