TY  - RPRT
TI  - Kinetic model of II-VI(001) semiconductor surfaces: Growth rates in atomic layer epitaxy
AU  - T. Volkmann
AU  - M. Ahr
AU  - M. Biehl
PY  - 2003
DO  - 10.1103/physrevb.69.165303
UR  - https://arxiv.org/abs/cond-mat/0310151
ID  - cond-mat/0310151
ER  -