@misc{indiciae5e41ad9e1270,
  title = {Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: effect of Ge concentration and biaxial stress},
  author = {A. Portavoce and P. Gas and I. Berbezier and A. Ronda and J. S. Christensen and B. Svensson},
  year = {2004},
  doi = {10.1063/1.1781767},
  url = {https://arxiv.org/abs/cond-mat/0409256},
  note = {Source identifier: cond-mat/0409256}
}