TY  - RPRT
TI  - Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: effect of Ge concentration and biaxial stress
AU  - A. Portavoce
AU  - P. Gas
AU  - I. Berbezier
AU  - A. Ronda
AU  - J. S. Christensen
AU  - B. Svensson
PY  - 2004
DO  - 10.1063/1.1781767
UR  - https://arxiv.org/abs/cond-mat/0409256
ID  - cond-mat/0409256
ER  -