@misc{indiciaed4532c2d2186,
  title = {Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation},
  author = {V. Aubry-Fortuna and P. Dollfus and S. Galdin-Retailleau},
  year = {2005},
  doi = {10.1016/j.sse.2005.06.013},
  url = {https://arxiv.org/abs/cond-mat/0411340},
  note = {Source identifier: cond-mat/0411340}
}