TY  - RPRT
TI  - Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation
AU  - V. Aubry-Fortuna
AU  - P. Dollfus
AU  - S. Galdin-Retailleau
PY  - 2005
DO  - 10.1016/j.sse.2005.06.013
UR  - https://arxiv.org/abs/cond-mat/0411340
ID  - cond-mat/0411340
ER  -