TY  - RPRT
TI  - High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces
AU  - K. Eng
AU  - R. N. McFarland
AU  - B. E. Kane
PY  - 2005
DO  - 10.1063/1.2001734
UR  - https://arxiv.org/abs/cond-mat/0501608
ID  - cond-mat/0501608
ER  -