@misc{indiciae015b6fe97e4e,
  title = {Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric},
  author = {K. Lai and P. D. Ye and W. Pan and D. C. Tsui and S. A. Lyon and M. Muhlberger and F. Schaffler},
  year = {2005},
  doi = {10.1063/1.2076439},
  url = {https://arxiv.org/abs/cond-mat/0504484},
  note = {Source identifier: cond-mat/0504484}
}