TY  - RPRT
TI  - Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
AU  - K. Lai
AU  - P. D. Ye
AU  - W. Pan
AU  - D. C. Tsui
AU  - S. A. Lyon
AU  - M. Muhlberger
AU  - F. Schaffler
PY  - 2005
DO  - 10.1063/1.2076439
UR  - https://arxiv.org/abs/cond-mat/0504484
ID  - cond-mat/0504484
ER  -