@misc{indiciae9123a31e8c65,
  title = {Ion implanted Si:P double-dot with gate tuneable interdot coupling},
  author = {V. C. Chan and T. M. Buehler and A. J. Ferguson and D. R. McCamey and D. J. Reilly and A. S. Dzurak and R. G. Clark and C. Yang and D. N. Jamieson},
  year = {2006},
  doi = {10.1063/1.2364664},
  url = {https://arxiv.org/abs/cond-mat/0602538},
  note = {Source identifier: cond-mat/0602538}
}