@misc{indiciae52595ecc2c1f,
  title = {Thermally activated reorientation of di-interstitial defects in silicon},
  author = {J. Kim and F. Kirchhoff and W. G. Aulbur and J. W. Wilkins and F. S. Khan and G. Kresse},
  year = {1999},
  doi = {10.1103/physrevlett.83.1990},
  url = {https://arxiv.org/abs/cond-mat/9904031},
  note = {Source identifier: cond-mat/9904031}
}