TY  - RPRT
TI  - Thermally activated reorientation of di-interstitial defects in silicon
AU  - J. Kim
AU  - F. Kirchhoff
AU  - W. G. Aulbur
AU  - J. W. Wilkins
AU  - F. S. Khan
AU  - G. Kresse
PY  - 1999
DO  - 10.1103/physrevlett.83.1990
UR  - https://arxiv.org/abs/cond-mat/9904031
ID  - cond-mat/9904031
ER  -