@misc{indiciae526298110f60,
  title = {In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography},
  author = {S. Luescher and A. Fuhrer and R. Held and T. Heinzel and K. Ensslin and W. Wegscheider},
  year = {1999},
  doi = {10.1063/1.125045},
  url = {https://arxiv.org/abs/cond-mat/9909340},
  note = {Source identifier: cond-mat/9909340}
}