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arXiv2009

Applications of random matrix theory to condensed matter and optical physics

This is a cursory overview of applications of concepts from random matrix theory (RMT) to quantum electronics and classical & quantum optics. The emphasis is on phenomena, predicted or explained by RMT, that have actually been observed in experiments on quantum wires, quantum dots, disordered wave guides, and chaotic resonators. Topics considered include universal conductance fluctuations, weak localization and coherent backscattering, sub-Poissonian shot noise and open transmission channels, non-Gaussian conductance and thermopower distributions, mesoscopic superconductivity, grey-body radiation, and chaotic laser cavities.

cond-mat.mes-hall↗

arXiv2009

Quasiparticle tunneling: P(E) theory

A calculation of the energy decay rate of a Josephson qubit from non-equilibrium quasiparticles is made using the environmental P(E) theory. For a large-capacitance qubit, we extend the theory to include the tunneling of quasiparticles, which has an electron- and hole-like charge components.

cond-mat.mes-hall↗

arXiv2009

Energy Decay in Josephson Qubits from Non-equilibrium Quasiparticles

We calculate the energy decay rate of Josephson qubits and superconducting resonators from non-equilibrium quasiparticles. The decay rates from experiments are shown to be consistent with predictions based on a prior measurement of the quasiparticle density n_qp = 10/um^3, which suggests that non-equilibrium quasiparticles are an important decoherence source for Josephson qubits. Calculations of the energy-decay and diffusion of quasiparticles also indicate that prior engineered gap and trap structures, which reduce the density of quasiparticles, should be redesigned to improve their efficacy. This model also explains a striking feature in Josephson qubits and resonators - a small reduction in decay rate with increasing temperature.

cond-mat.mes-hall↗

arXiv2009

On quantum optical properties of single-walled carbon nanotube

We study quantum optical properties of the single-walled carbon nanotube (SWCNT) by introducing the effective interaction between the quantized electromagnetic field and the confined electrons in the SWCNT. Our purpose is to explore the quantum natures of electron transport in the SWCNT by probing its various quantum optical properties relevant to quantum coherence, such as the interference of the scattered and emitted photons, and the bunching and anti-bunching of photons which are characterized by the higher order coherence functions. In the strong field limit, we study the interband Rabi oscillation of electrons driven by a classical light. We also investigate the possible lasing mechanism in superradiation of coherent electrons in a SWCNT driven by a light pump or electron injection, which generate electron population inversion in the higher energy-band of SWCNT.

cond-mat.mes-hall↗

arXiv2009

Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon

Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the surface of a silicon sample. Using a capacitance-based approach, we have both spatially-resolved individual subsurface boron acceptors and detected spectroscopically single holes entering and leaving these minute systems of atoms. A resonance identified as the B+ state is shown to shift in energy from acceptor to acceptor. We examine this behavior with respect to nearest-neighbor distances. By directly measuring the quantum levels and testing the effect of dopant-dopant interactions, this method represents a valuable tool for the development of future atomic-scale semiconductor devices.

cond-mat.mes-hall↗

arXiv2011

Macroscopic effects of tunneling barriers in nanotube bundles aggregates

We report on experiments conducted on single walled carbon nanotube bundles aligned in chains and connected through a natural contact barrier. The dependence upon the temperature of the transport properties is investigated for samples having different characteristics. Starting from two bundles separated by one barrier deposited over four contact probes, we extend the study of the transport properties to samples formed by chains of several bundles. The systematic analysis of the properties of these aggregates shows the existence of two conduction regimes in the barrier. We show that an electrical circuit taking into account serial and parallel combinations of voltages generated at the junctions between bundles models the samples consistently.

cond-mat.mes-hall↗

arXiv2009

Comment on The Rise of Semiconductor Spintronics

I argue that most of the key experiments that have born semiconductor spintronics were done and published earlier than the papers cited in the Nature Physics, 4 S20 (2008) milestone article (http://www.nature.com/milestones/spin, milestone 23).

cond-mat.mes-hall↗

arXiv2009

Simulation of interstitial diffusion of ion-implanted boron

A model of the interstitial diffusion of ion-implanted boron during rapid thermal annealing of silicon layers previously amorphized by implantation of germanium has been proposed. It is supposed that the boron interstitials are generated continuously during annealing due to dissolution or rearrangement of the clusters of impurity atoms which are formed in the ion-implanted layers with impurity concentration above the solubility limit. The local elastic stresses arising due to the difference of boron atomic radius and atomic radius of silicon also contribute to the generation of boron interstitials. On the basis of the model proposed a simulation of redistribution of ion-implanted boron during rapid thermal annealing with duration of 60 s at a temperature of 850 degrees Celsius has been carried out. The calculated profile of boron distribution after thermal treatment agrees well with the experimental data that confirms the adequacy of the model. A number of the parameters of interstitial diffusion have been derived. In particular, the average migration length of nonequilibrium boron interstitials is equal to 12 nanometers. It was also obtained that approximately 1.96 % of boron atoms were converted to the interstitial sites, participated in the fast interstitial migration, and then became immobile again transferring into a substitutional position or forming the electrically inactive complexes with defects of crystal lattice.

cond-mat.mtrl-sci↗

arXiv2009

Nonequilibrium transport through a singlet-triplet Anderson impurity

We study the Anderson model in which a configuration with a doublet is hybridized with another with a singlet and a triplet. We calculate the conductance through the system as a function of temperature and bias voltage, near the quantum critical line for which the system is exactly solvable. The results explain recent transport measurements in a single-molecule quantum dot.

cond-mat.str-el↗

arXiv2009

Gate control of low-temperature spin dynamics in two-dimensional hole systems

We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as well as time-resolved photoluminescence spectroscopy are utilized in our study. We observe long-lived hole spin dynamics that are strongly temperature dependent, indicating that in-plane localization is crucial for hole spin coherence. By applying a gate voltage, we are able to tune the observed hole g factor by more than 50 percent. Calculations of the hole g tensor as a function of the applied bias show excellent agreement with our experimental findings.

cond-mat.mes-hall↗

arXiv2009

Edge disorder and localization regimes in bilayer graphene nanoribbons

A theoretical study of the magnetoelectronic properties of zigzag and armchair bilayer graphene nanoribbons (BGNs) is presented. Using the recursive Green's function method, we study the band structure of BGNs in uniform perpendicular magnetic fields and discuss the zero-temperature conductance for the corresponding clean systems. The conductance quantized as 2(n+1)G_ for the zigzag edges and nG_0 for the armchair edges with G_{0}=2e^2/h being the conductance unit and $n$ an integer. Special attention is paid to the effects of edge disorder. As in the case of monolayer graphene nanoribbons (GNR), a small degree of edge disorder is already sufficient to induce a transport gap around the neutrality point. We further perform comparative studies of the transport gap E_g and the localization length in bilayer and monolayer nanoribbons. While for the GNRs E_{g}^{GNR}is proportional to 1/W, the corresponding transport gap E_{g}^{BGN} for the bilayer ribbons shows a more rapid decrease as the ribbon width W is increased. We also demonstrate that the evolution of localization lengths with the Fermi energy shows two distinct regimes. Inside the transport gap, xi is essentially independent on energy and the states in the BGNs are significantly less localized than those in the corresponding GNRs. Outside the transport gap ξgrows rapidly as the Fermi energy increases and becomes very similar for BGNs and GNRs.

cond-mat.mes-hall↗

arXiv2011

Shot noise and conductivity at high bias in bilayer graphene: Signatures of electron-optical phonon coupling

We have studied electronic conductivity and shot noise of bilayer graphene (BLG) sheets at high bias voltages and low bath temperature $T_0=4.2$ K. As a function of bias, we find initially an increase of the differential conductivity, which we attribute to self-heating. At higher bias, the conductivity saturates and even decreases due to backscattering from optical phonons. The electron-phonon interactions are also responsible for the decay of the Fano factor at bias voltages $V>0.1$ V. The high bias electronic temperature has been calculated from shot noise measurements, and it goes up to $\sim1200$ K at $V=0.75$ V. Using the theoretical temperature dependence of BLG conductivity, we extract an effective electron-optical phonon scattering time $τ_{e-op}$. In a 230 nm long BLG sample of mobility $μ=3600$ cm$^2$V$^{-1}$s$^{-1}$, we find that $τ_{e-op}$ decreases with increasing voltage and is close to the charged impurity scattering time $τ_{imp}=60$ fs at $V=0.6$ V.

cond-mat.mes-hall↗

arXiv2009

Quantum walk on the line with quantum rings

We propose a scheme to implement the one-dimensional coined quantum walk with electrons transported through a two-dimensional network of spintronic semiconductor quantum rings. The coin degree of freedom is represented by the spin of the electron, while the discrete position of the walker corresponds to the label of the rings in one of the spatial directions in the network. We assume that Rashba-type spin-orbit interaction is present in the rings, the strength of which can be tuned by an external electric field. The geometry of the device, together with the appropriate spin-orbit interaction strengths, ensure the realization of the coin-toss (i.e. spin-flip) and the step operator.

cond-mat.mes-hall↗

arXiv2009

Atomistic theory for the damping of vibrational modes in mono-atomic gold chains

We develop a computational method for evaluating the damping of vibrational modes in mono-atomic metallic chains suspended between bulk crystals under external strain. The damping is due to the coupling between the chain and contact modes and the phonons in the bulk substrates. The geometry of the atoms forming the contact is taken into account. The dynamical matrix is computed with density functional theory in the atomic chain and the contacts using finite atomic displacements, while an empirical method is employed for the bulk substrate. As a specific example, we present results for the experimentally realized case of gold chains in two different crystallographic directions. The range of the computed damping rates confirm the estimates obtained by fits to experimental data [Frederiksen et al., Phys. Rev. B, 75, 205413(R)(2007)]. Our method indicates that an order-of-magnitude variation in the damping is possible even for relatively small changes in the strain. Such detailed insight is necessary for a quantitative analysis of damping in metallic atomic chains, and in explaining the rich phenomenology seen in the experiments.

cond-mat.mes-hall↗

arXiv2009

Correlated States of Electrons in Wide Quantum Wells at Low Fillings: The Role of Charge Distribution Symmetry

Magneto-transport measurements on electrons confined to a 57 nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings ($ν$) display a remarkable dependence on the symmetry of the electron charge distribution. At a density of $1.93 \times 10^{11}$ cm$^{-2}$, a developing fractional quantum Hall state is observed at the even-denominator filling $ν= 1/4$ when the distribution is symmetric, but it quickly vanishes when the distribution is made asymmetric. At lower densities, as we make the charge distribution asymmetric, we observe a rapid strengthening of the insulating phases that surround the $ν= 1/5$ fractional quantum Hall state.

cond-mat.mes-hall↗

arXiv2009

Correlated coherent oscillations in coupled semiconductor charge qubits

Designing coherent processes is essential for developing quantum information technologies. We study coherent dynamics of two spatially separated electrons in a coupled semiconductor double quantum dot (DQD), in which various two-qubit operations are demonstrated just by adjusting the gate voltages. Especially, second-order correlated coherent oscillations provide functional quantum processes for making quantum correlation of separated particles. The results encourage searching quantum entanglement in electronic devices.

cond-mat.mes-hall↗

arXiv2009

Weak-Coupling Limit. I A Contraction Semigroup for Infinite Subsystems

We consider the class of quantum mechanical master equations defined on a generic Banach space, arising by projecting weakly perturbed one-parameter groups of isometries. We show that the possible semigroup approximations are far from unique. However, uniqueness can be reestablished through the introduction of a dynamical time averaging map. The generator of the resulting Contraction Semigroup is always well defined, irrespective of the dimensions of the projected subspace, and of the spectral properties of its free dynamics. We show how our approach includes and generalizes the preexisting literature.

quant-ph↗

arXiv2009

Weak-Coupling Limit. II On the Quantum Fokker-Planck Equation

In a recent work we have found a contraction semigroup able to correctly approximate a projected and perturbed one-parameter group of isometries in a generic Banach space, in the limit of weak-coupling. Here we study its generator by specializing to $W^*$-algebras: after defining a Physical Subsystem in terms of a completely positive projecting conditional expectation, we find that it generates a Quantum Dynamical Semigroup. As a consequence of uniqueness and strong generality (well defined dynamics, irrespective of the Physical Subsystem spectral properties or dimensions), its generator deserves to be referred as "the" Quantum Fokker-Planck Equation. We then provide important examples of the limit dynamics, one of which constitutes a new Quantum generalization of the celebrated Fermi Golden Rule.

quant-ph↗