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arXiv2013

Synthesis, Crystal Structure and Physical Properties of Sr2FeOsO6

In the exploration of new osmium based double perovskites, Sr2FeOsO6 is a new insertion in the existing family. The polycrystalline compound has been prepared by solid state synthesis from the respective binary oxides. PXRD analysis shows the structure is pseudo-cubic at room temperature, whereas low-temperature synchrotron data refinements reveal the structure to be tetragonal, space group I4/m. Heat capacity and magnetic measurements of Sr2FeOsO6 indicated the presence of two magnetic phase transitions at T1 = 140 K and T2 = 67 K. Band structure calculations showed the compound as a narrow energy gap semiconductor, which supports the experimental results obtained from the resistivity measurements. The present study documents significant structural and electronic effects of substituting Fe3+ for Cr3+ ion in Sr2CrOsO6.

cond-mat.mtrl-sci↗

arXiv2013

Control of Intermolecular Bonds by Deposition Rates at Room Temperature: Hydrogen Bonds versus Metal Coordination in Trinitrile Monolayers

Self-assembled monolayers of 1,3,5-tris(4'-biphenyl-4"-carbonitrile)benzene, a large functional trinitrile molecule, on the (111) surfaces of copper and silver under ultrahigh vacuum conditions were studied by scanning tunneling microscopy and low-energy electron diffraction. A densely packed hydrogen-bonded polymorph was equally observed on both surfaces. Additionally, deposition onto Cu(111) yielded a well-ordered metal-coordinated porous polymorph that coexisted with the hydrogen-bonded structure. The required coordination centers were supplied by the adatom gas of the Cu(111) surface. On Ag(111), however, the well-ordered metal-coordinated network was not observed. Differences between the adatom reactivities on copper and silver and the resulting bond strengths of the respective coordination bonds are held responsible for this substrate dependence. By utilizing ultralow deposition rates, we demonstrate that on Cu(111) the adatom kinetics plays a decisive role in the expression of intermolecular bonds and hence structure selection.

cond-mat.mtrl-sci↗

arXiv2013

Level alignment of a prototypical photocatalytic system: Methanol on TiO2(110)

Photocatalytic and photovoltaic activity depends on the optimal alignment of electronic levels at the molecule/semiconductor interface. Establishing level alignment experimentally is complicated by the uncertain chemical identity of the surface species. We address the assignment of the occupied and empty electronic levels for the prototypical photocatalytic system of methanol on a rutile TiO2 (110) surface. Using many-body quasiparticle (QP) techniques we show that the frontier levels measured in ultraviolet photoelectron and two photon photoemission spectroscopy experiments can be assigned with confidence to the molecularly chemisorbed methanol, rather than its decomposition product, the methoxy species. We find the highest occupied molecular orbital (HOMO) of the methoxy species is much closer to the valence band maximum, suggesting why it is more photocatalytically active than the methanol molecule. We develop a general semi-quantitative model for predicting many-body QP energies based on the appropriate description of electronic screening within the bulk, molecular or vacuum regions of the wavefunctions at molecule/semiconductor interfaces.

cond-mat.mtrl-sci↗

arXiv2017

Two-Dimensional Semiconducting Boron Monolayers

The two-dimensional boron monolayers were reported to be metallic both in previous theoretical predictions and experimental observations, however, we have firstly found a family of boron monolayers with the novel semiconducting property as confirmed by the first-principles calculations with the quasi-particle G0W0 approach. We demonstrate that the vanished metallicity characterized by the pz-derived bands cross the Fermi level is attributed to the motif of a triple-hexagonal-vacancy, with which various semiconducting boron monolayers are designed to realize the band-gap engineering for the potential applications in electronic devices. The semiconducting boron monolayers in our predictions are expected to be synthesized on the proper substrates, due to the similar stabilities to the ones observed experimentally.

cond-mat.mtrl-sci↗

arXiv2001

Single-Crystal High-Frequency EPR Investigation of a Tetranuclear Iron(III) Single-Molecule Magnet

A high-frequency (95 GHz) EPR study is reported on single crystals of the planar tetranuclear complex Fe4(OCH3)6(dpm)6 (where Hdpm = dipivaloylmethane), which has been previously shown to present typical single-molecule magnet behaviour. The spectra, all originating from the S = 5 ground state, possess quasi-axial symmetry along the normal to the plane defined by the four Fe(III) ions. The measured spectra are shown to belong to three different structural variations of the compound, resulting from disorder in the ligands around two of the Fe(III) ions. Accurate values could be obtained for the second- and fourth-order crystal field parameters related to the parallel EPR-spectra, while the other parameters could be determined only for the dominant species. The separation between individual lines is decreasing and vanishing with increasing temperature. This effect is attributed to the contribution of fast relaxing excited states, whose population is varying with temperature.

cond-mat.mes-hall↗

arXiv2013

Ice Formation via Deposition Mode Nucleation on Bare and Alcohol-covered Graphite Surfaces

Deposition of water on aerosol particles contributes to ice cloud formation in the atmosphere with implications for the water cycle and climate on Earth. The heterogeneous ice nucleation process is influenced by physico-chemical properties of the substrate, but the mechanisms remain incompletely understood. Here, we report on ice formation on bare and alcohol-covered graphite at temperatures from 175 to 213 K, probed by elastic helium and light scattering. Water has a low wettability on bare and butanol-covered graphite resulting in the growth of rough ice surfaces. In contrast, pre-adsorbed methanol provides hydrophilic surface sites and results in the formation of smooth crystalline ice; an effect that is pronounced also for sub-monolayer methanol coverages. The alcohols primarily reside at the ice surface and at the ice-graphite interface with a minor fraction being incorporated into the growing ice structures. Methanol has no observable effect on gas/solid water vapor exchange whereas butanol acts as a transport barrier for water resulting in a reduction in ice evaporation rate at 185 K. Implications for the description of deposition mode freezing are discussed.

physics.chem-ph↗

arXiv2013

Surface Transformations and Water Uptake on Liquid and Solid Butanol near the Melting Temperature

Water interactions with organic surfaces are of central importance in biological systems and many Earth system processes. Here we describe experimental studies of water collisions and uptake kinetics on liquid and solid butanol from 160 to 200 K. Hyperthermal D2O molecules (0.32 eV) undergo efficient trapping on both solid and liquid butanol, and only a minor fraction scatters inelastically after an 80% loss of kinetic energy to surface modes. Trapped molecules either desorb within a few ms, or are taken up by the butanol phase during longer times. The water uptake and surface residence time increase with temperature above 180 K indicating melting of the butanol surface 4.5 K below the bulk melting temperature. Water uptake changes gradually across the melting point and trapped molecules are rapidly lost by diffusion into the liquid above 190 K. This indicates that liquid butanol maintains a surface phase with limited water permeability up to 5.5 K above the melting point. These surface observations are indicative of an incremental change from solid to liquid butanol over a range of 10 K straddling the bulk melting temperature, in contrast to the behavior of bulk butanol and previously studied materials.

physics.chem-ph↗

arXiv2013

Oriented Attachment of ZnO Nanocrystals

Self-organization of nanoparticles is a major issue to synthesize mesoscopic structures. Among the possible mechanisms leading to self-organization, the oriented attachment is efficient yet not completely understood. We investigate here the oriented attachment process of ZnO nanocrystals preformed in the gas phase. During the deposition in high vacuum, about 60% of the particles, which are uncapped, form larger crystals through oriented attachment. In the present conditions of deposition, no selective direction for the oriented attachment is noticed. To probe the driving force of the oriented attachment, and more specifically the possible influence of the dipolar interaction between particles, we have deposited the same nanocrystals in the presence of a constant electric field. The expected effect was to enhance the fraction of domains resulting from the oriented attachment due to the increased interaction of the particle dipoles with the electric field. The multiscale analytical and statistical analysis (TEM coupled to XRD) shows no significant influence of the electric field on the organization of the particles. We therefore conclude that the dipolar interaction between nanocrystals is not the prominent driving force in the process. Consequently, we argue, in accordance with recent theoretical and experimental investigations, that the surface reduction, possibly driven by Coulombic interaction, may be the major mechanism for the oriented attachment process.

cond-mat.mes-hall↗

arXiv2013

Contrasting Elastic Properties of Heavily B- and N-doped Graphene, with Random Distributions Including Aggregates

We focused on elastic properties of B- and N-doped graphene in wide range of concentrations up to 20%. The Young's, bulk and shear moduli and Poisson's ratio have been calculated by means of the density functional theory for a representative set of supercells with disordered impurity patterns including aggregates. In contrast to earlier work, it is demonstrated that doping with nitrogen even strengthens the graphene layers, whereas incorporation of boron induces large structural and morphological changes seen in simulated STM images. Young's and shear moduli increase or decrease with the doping strength for nitrogen or boron, respectively, while bulk modulus and Poisson's ratio exhibit opposite trends. Elastic properties of samples for both types of impurities are strongly related to the electronic structures, especially for heavy doping (>12%). Local arrangements of dopants and an agregation or separation of impurities play crucial role in the determination of stiffness in the investigated systems. Interestingly, these findings are opossed for B- and N-contained samples.

cond-mat.mtrl-sci↗

arXiv2013

Nanoscale Dielectric Capacitors Composed of Graphene and Boron Nitride Layers: A First Principles Study of High-Capacitance at Nanoscale

We investigate a nanoscale dielectric capacitor model consisting of two-dimensional, hexagonal h-BN layers placed between two commensurate and metallic graphene layers using self-consistent field density functional theory. The separation of equal amounts of electric charge of different sign in different graphene layers is achieved by applying electric field perpendicular to the layers. The stored charge, energy, and the electric potential difference generated between the metallic layers are calculated from the first-principles for the relaxed structures. Predicted high-capacitance values exhibit the characteristics of supercapacitors. The capacitive behavior of the present nanoscale model is compared with that of the classical Helmholtz model, which reveals crucial quantum size effects at small separations, which in turn recede as the separation between metallic planes increases.

cond-mat.mes-hall↗

arXiv2013

Line Defects in Molybdenum Disulfide Layers

Layered molecular materials and especially MoS2 are already accepted as promising candidates for nanoelectronics. In contrast to the bulk material, the observed electron mobility in single-layer MoS2 is unexpectedly low. Here we reveal the occurrence of intrinsic defects in MoS2 layers, known as inversion domains, where the layer changes its direction through a line defect. The line defects are observed experimentally by atomic resolution TEM. The structures were modeled and the stability and electronic properties of the defects were calculated using quantum-mechanical calculations based on the Density-Functional Tight-Binding method. The results of these calculations indicate the occurrence of new states within the band gap of the semiconducting MoS2. The most stable non-stoichiometric defect structures are observed experimentally, one of which contains metallic Mo-Mo bonds and another one bridging S atoms.

cond-mat.mtrl-sci↗

arXiv2013

Fluorination Effects on the Structural Stability and Electronic Properties of sp3 Type Silicon Nanotubes

A density functional theory study of the structural and electronic properties and relative stability of fluorinated sp3 silicon nanotubes and their corresponding silicon nanowires built along various crystallographic orientations is presented. The structural stability is found to increase linearly with the fluorine surface coverage and for coverages exceeding 25% the tubular structures are predicted to be more stable than their wire-like counterparts. The bandgaps of the fully fluorinated systems are lower than those of their fully hydrogenated counterparts by up to 0.79 eV for systems having a relatively low silicon molar fraction. As the silicon molar fraction increases these differences appear to reduce. For mixed fluorination and hydrogenation surface decoration schemes the bandgaps usually lie between the values of the fully hydrogenated and fully fluorinated systems. Furthermore, the bandgap values of the silicon nanotubes are found to be more sensitive to the fluorine surface coverage than those of the silicon nanowires. These results indicate that surface functionalization may be used to control the stability of narrow quasi-one-dimensional silicon nanostructures and opens the way towards chemical tailoring of their electronic properties.

cond-mat.mtrl-sci↗

arXiv2013

Multi-Doping of Si Cages: High Spin States beyond the Single-Dopant Septet Limit

Density-functional theory based global geometry optimization is employed to systematically scrutinize the possibility of multi-doping of hydrogenated Si clusters in order to achieve high spin states beyond the septet limit of a single-atom dopant. While our unbiased configurational search reveals that the previously suggested Si18H12 double hexagonal prism structure is generally too small to accommodate two dopants in magnetized state, the larger Si24H24 cage turns out to be suitable for such applications. For dimer dopants M2+ = Cr2+, Mn2+ and CrMn+, the structural integrity of the host cage is conserved in the ground-state structure of corresponding M2+@Si24H24 aggregates, as is the unusually high spin state of the guest dopant, which in case of Cr2+ already exceeds the single-atom dopant septet limit by almost a factor of two. Moreover, the possibility of further increasing the cluster spin moment by encapsulating an even larger number of dopants into a suitably sized hydrogenated Si cage is illustrated for the example of a (CrMn+)2@Si28H28 aggregate with a total number of 18 unpaired electrons. These results strongly suggest multi-doping of Si clusters as a viable route to novel cluster-based materials for magneto-optic applications.

cond-mat.mtrl-sci↗

arXiv2013

Missing short-range interactions in the hydrogen bond of compressed ice

Combining the Lagrangian-Laplace mechanics and the known pressure dependence of the length-stiffness relaxation dynamics, we have determined the critical, yet often-overlooked, short-range interactions in the hydrogen bond of compressed ice. This approach has enabled determination of the force constant, cohesive energy, potential energy of the vdW and the covalent segment at each quasi-equilibrium state as well as their pressure dependence. Evidencing the essentiality of the inter-electron-pair Coulomb repulsion and the segmental strength disparity in determining the asymmetric H-bond relaxation dynamics and the anomalous properties of ice, results confirmed that compression shortens and stiffens the OH bond and meanwhile lengthens and softens the covalent bond.

cond-mat.mtrl-sci↗

arXiv2013

Charge-Transfer State Dynamics Following Hole and Electron Transfer in Organic Photovoltaic Devices

The formation of bound electron-hole pairs, also called charge-transfer (CT) states, in organic-based photovoltaic devices is one of the dominant loss mechanisms hindering performance. While CT state dynamics following electron transfer from donor to acceptor have been widely studied, there is not much known about the dynamics of bound CT states produced by hole transfer from the acceptor to the donor. In this letter, we compare the dynamics of CT states formed in the different charge-transfer pathways in a range of model systems. We show that the nature and dynamics of the generated CT states are similar in the case of electron and hole transfer. However the yield of bound and free charges is observed to be strongly dependent on the HOMOD-HOMOA and LUMOD-LUMOA energy differences of the material system. We propose a qualitative model in which the effects of static disorder and sampling of states during the relaxation determine the probability of accessing CT states favourable for charge separation.

cond-mat.mes-hall↗

arXiv2013

Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy

The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of few layer MoS2 transistors qualitatively follow the optical absorption spectra of MoS2, providing direct evidence of interband photoexcitation. Time and spectrally resolved photocurrent measurements at varying external electric fields and carrier concentrations establish that drift-diffusion currents dominate photothermoelectric currents in devices under bias.

cond-mat.mes-hall↗

arXiv2013

Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have recently attracted tremendous interest as potential valleytronic and nano-electronic materials, in addition to being well-known as excellent lubricants in the bulk. The interlayer van der Waals (vdW) coupling and low frequency phonon modes, and how they evolve with the number of layers, are important for both the mechanical and electrical properties of 2D TMDs. Here we uncover the ultra-low frequency interlayer breathing and shear modes in few-layer MoS2 and WSe2, prototypical layered TMDs, using both Raman spectroscopy and first principles calculations. Remarkably, the frequencies of these modes can be perfectly described using a simple linear chain model with only nearest-neighbour interactions. We show that the derived in-plane (shear) and out-of-plane (breathing) force constants from experiment remain the same from two-layer 2D crystals to the bulk materials, suggesting that the nanoscale interlayer frictional characteristics of these excellent lubricants should be independent of the number of layers.

cond-mat.mtrl-sci↗

arXiv2013

Modulation of Thermal Conductivity in Kinked Silicon Nanowires: Phonon Interchanging and Pinching Effects

We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, i.e a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

cond-mat.mtrl-sci↗