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arXiv2013

Universal Distance-Scaling of Non-radiative Energy Transfer to Graphene

The near-field interaction between fluorescent emitters and graphene exhibits rich physics associated with local dipole-induced electromagnetic fields that are strongly enhanced due to the unique properties of graphene. Here, we measure emitter lifetimes as a function of emitter-graphene distance d, and find agreement with a universal scaling law, governed by the fine-structure constant. The observed energy transfer- rate is in agreement with a 1/d^4 dependence that is characteristic of 2D lossy media. The emitter decay rate is enhanced 90 times (transfer efficiency of ~99%) with respect to the decay in vacuum at distances d ~ 5 nm. This high energy-transfer rate is mainly due to the two-dimensionality and gapless character of the monoatomic carbon layer. Graphene is thus shown to be an extraordinary energy sink, holding great potential for photodetection, energy harvesting, and nanophotonics.

cond-mat.mes-hall↗

arXiv2013

GdN Nanoisland-Based GaN Tunnel Junctions

We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 Ω-cm2) for various optoelectronic applications. We exploit the ability to overgrow high quality GaN over GdN nanoislands to create new nanoscale heterostructure designs that are not feasible in planar epitaxy. GdN nanoisland assisted inter-band tunneling was found to enhance tunneling in both of the polar orientations of GaN. Tunnel injection of holes was confirmed by low temperature operation of GaN p-n junction with a tunneling contact layer, showing strong electroluminescence down to 20K. The availability of tunnel junctions with negligible absorption could not only improve the efficiency of existing optoelectronic devices significantly, but also enable new electronic and optical devices based on wide band gap materials.

cond-mat.mtrl-sci↗

arXiv2013

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transistors. Over 100 devices are studied to obtain a statistical description of device performance in CVD MoS2. We examine and scale down the channel length of the transistors to 100 nm and achieve record high drain current of 62.5 mA/mm in CVD monolayer MoS2 film ever reported. We further extract the intrinsic contact resistance of low work function metal Ti on monolayer CVD MoS2 with an expectation value of 175 Ω.mm, which can be significantly decreased to 10 Ω.mm by appropriate gating. Finally, field-effect mobilities (μFE) of the carriers at various channel lengths are obtained. By taking the impact of contact resistance into account, an average and maximum intrinsic μFE is estimated to be 13.0 and 21.6 cm2/Vs in monolayer CVD MoS2 films, respectively.

cond-mat.mes-hall↗

arXiv2013

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility (μ) in them as compared with corresponding bulk structures, which constitutes the main hurdle for realizing high-performance devices. To address this issue, we perform combined experimental and theoretical study on atomically thin MoS2 field effect transistors with varying the number of MoS2 layers (NLs). Experimentally, an intimate relation is observed with a 10-fold degradation in μ for extremely thinned monolayer channels. To accurately describe the carrier scattering process and shed light on the origin of the thinning-induced mobility degradation, a generalized Coulomb scattering model is developed with strictly considering device configurative conditions, i.e., asymmetric dielectric environments and lopsided carrier distribution. We reveal that the carrier scattering from interfacial Coulomb impurities (e.g., chemical residues, gaseous adsorbates and surface dangling bonds) is greatly intensified in extremely thinned channels, resulting from shortened interaction distance between impurities and carriers. Such a pronounced factor may surpass lattice phonons and serve as dominant scatterers. This understanding offers new insight into the thickness induced scattering intensity, highlights the critical role of surface quality in electrical transport and would lead to rational performance improvement strategies for future atomic electronics.

cond-mat.mes-hall↗

arXiv2013

Magneto-Transport in MoS2: Phase Coherence, Spin Orbit Scattering and the Hall Factor

We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase coherence length of ~50 nm at T = 400 mK for a few-layer MoS2 film, decreasing as T^-1/2 with increased temperatures. Weak localization measurements also allow us, for the first time without optical techniques, to estimate the spin orbit scattering length to be 430 nm, pointing to the potential of MoS2 for spintronics applications. Via Hall-effect measurements, we observe a low temperature Hall mobility of 311 cm2/Vs at T = 1 K which decreases as a power law with a characteristic exponent γ=1.5 from 10 K to 60 K. At room temperature, we observe Hall mobility of 24 cm2/Vs. By determining the Hall factor for MoS2 to be 1.35 at T = 1 K and 2.4 at room temperature, we observe drift mobility of 420 cm2/Vs and 56 cm2/Vs at T = 1 K and room temperature, respectively.

cond-mat.mes-hall↗

arXiv2013

Van der Waals heterostructures

Research on graphene and other two-dimensional atomic crystals is intense and likely to remain one of the hottest topics in condensed matter physics and materials science for many years. Looking beyond this field, isolated atomic planes can also be reassembled into designer heterostructures made layer by layer in a precisely chosen sequence. The first - already remarkably complex - such heterostructures (referred to as 'van der Waals') have recently been fabricated and investigated revealing unusual properties and new phenomena. Here we review this emerging research area and attempt to identify future directions. With steady improvement in fabrication techniques, van der Waals heterostructures promise a new gold rush, rather than a graphene aftershock.

cond-mat.mtrl-sci↗

arXiv2012

Femtosecond nonlinear ultrasonics in gold probed with ultrashort surface plasmons

Fundamental interactions induced by lattice vibrations on ultrafast time scales become increasingly important for modern nanoscience and technology. Experimental access to the physical properties of acoustic phonons in the THz frequency range and over the entire Brillouin zone is crucial for understanding electric and thermal transport in solids and their compounds. Here, we report on the generation and nonlinear propagation of giant (1 percent) acoustic strain pulses in hybrid gold/cobalt bilayer structures probed with ultrafast surface plasmon interferometry. This new technique allows for unambiguous characterization of arbitrary ultrafast acoustic transients. The giant acoustic pulses experience substantial nonlinear reshaping already after a propagation distance of 100 nm in a crystalline gold layer. Excellent agreement with the Korteveg-de Vries model points to future quantitative nonlinear femtosecond THz-ultrasonics at the nano-scale in metals at room temperature.

physics.optics↗

arXiv2013

High Performance Piezoelectric Devices Based on Aligned Arrays of Nanofibers of Poly[(vinylidenefluoride-co-trifluoroethylene]

Multifunctional capability, flexible design, rugged lightweight construction, and self-powered operation are desired attributes for electronics that directly interface with the human body or with advanced robotic systems. For these and related applications, piezoelectric materials, in forms that offer the ability to bend and stretch, are attractive for pressure/force sensors and mechanical energy harvesters. In this paper we introduce a large area, flexible piezoelectric material that consists of sheets of electrospun fibers of the polymer poly[(vinylidenefluoride-co-trifluoroethylene]. The flow and mechanical conditions associated with the spinning process yield free-standing, three-dimensional architectures of aligned arrangements of such fibers, in which the polymer chains adopt strongly preferential orientations. The resulting material offers exceptional piezoelectric characteristics, to enable, as an example, ultra-high sensitivity for measuring pressure, even at exceptionally small values (0.1 Pa). Quantitative analysis provides detailed insights into the pressure sensing mechanisms, and engineering design rules. Applications range from self-powered micro-mechanical elements, to self-balancing robots and sensitive impact detectors.

cond-mat.mtrl-sci↗

arXiv2013

Photocurrent in graphene harnessed by tunable intrinsic plasmons

Graphene's optical properties in the infrared and terahertz can be tailored and enhanced by patterning graphene into periodic metamaterials with sub-wavelength feature sizes. Here we demonstrate polarization sensitive and gate tunable photodetection in graphene nanoribbon arrays. The long-lived hybrid plasmon-phonon modes utilized are coupled excitations of electron density oscillations and substrate (SiO2) surface polar phonons. Their excitation by s-polarization leads to an in-resonance photocurrent an order of magnitude larger than the photocurrent observed for p-polarization, which excites electron-hole pairs. The plasmonic detectors exhibit photoinduced temperature increases up to four times as large as comparable 2D graphene detectors. Moreover, the photocurrent sign becomes polarization sensitive in the narrowest nanoribbon arrays due to differences in decay channels for photoexcited hybrid plasmon-phonons and electrons. Our work provides a path to light sensitive and frequency selective photodetectors based on graphene's plasmonic excitations.

cond-mat.mes-hall↗

arXiv2013

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

There has been much interest in the injection and detection of spin polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate (STO) single crystals and La-doped STO epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ~100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the STO has a strong temperature dependence. This behavior and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/STO interfaces, perhaps related to the formation of doping induced Ti3+. Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material.

cond-mat.mtrl-sci↗

arXiv2013

Mean-field theory of random close packings of axisymmetric particles

Finding the optimal random packing of non-spherical particles is an open problem with great significance in a broad range of scientific and engineering fields. So far, this search has been performed only empirically on a case-by-case basis, in particular, for shapes like dimers, spherocylinders and ellipsoids of revolution. Here, we present a mean-field formalism to estimate the packing density of axisymmetric non-spherical particles. We derive an analytic continuation from the sphere that provides a phase diagram predicting that, for the same coordination number, the density of monodisperse random packings follows the sequence of increasing packing fractions: spheres < oblate ellipsoids < prolate ellipsoids < dimers < spherocylinders. We find the maximal packing densities of 73.1% for spherocylinders and 70.7% for dimers, in good agreement with the largest densities found in simulations. Moreover, we find a packing density of 73.6% for lens-shaped particles, representing the densest random packing of the axisymmetric objects studied so far.

cond-mat.soft↗

arXiv2013

Quantum Criticality in Electron-doped BaFe_{2-x}Ni_xAs_2

A quantum critical point (QCP) is a point in a system's phase diagram at which an order is completely suppressed at absolute zero temperature (T). The presence of a quantum critical point manifests itself in the finite-T physical properties, and often gives rise to new states of matter. Superconductivity in the cuprates and in heavy fermion materials is believed by many to be mediated by fluctuations associated with a quantum critical point. In the recently-discovered iron-pnictide high temperature superconductors, it is unknown whether a QCP exists or not in a carrier-doped system. Here we report transport and nuclear magnetic resonance (NMR) measurements on BaFe_{2-x}Ni_xAs_2 (0 =< x =< 0.17). We find two critical points at x_{c1} = 0.10 and x_{c2} = 0.14. The electrical resistivity follows ρ= ρ_0 + A*T^n, with n = 1 around x_{c1} and another minimal n = 1.1 at x_{c2}. By NMR measurements, we identity x_{c1} to be a magnetic QCP and suggest that x_{c2} is a new type of QCP associated with a nematic structural phase transition. Our results suggest that the superconductivity in carrier-doped pnictides is closely linked to the quantum criticality.

cond-mat.supr-con↗

arXiv2013

Demonstration of a novel focusing small-angle neutron scattering instrument equipped with axisymmetric mirrors

Small-angle neutron scattering (SANS) is the most significant neutron technique in terms of impact on science and engineering. However, the basic concept of SANS facilities has not changed since the technique's inception about 40 years ago, as all SANS instruments, save a few, are still designed as pinhole cameras. Here we demonstrate a novel concept for a SANS instrument, based on axisymmetric focusing mirrors. We build and test a small prototype, which shows a performance comparable to that of conventional large SANS facilities. By using a detector with 50-micron pixels, we build the most compact SANS instrument in the world. This work, together with the recent demonstration that such mirrors could increase the signal rate at least 50-fold, while improving resolution, paves the way to novel SANS instruments, thus affecting a broad community of scientists and engineers.

physics.ins-det↗

arXiv2013

Artificially engineered superlattices of pnictide superconductor

Significant progress has been achieved in fabricating high quality bulk and thinfilm iron-based superconductors. In particular, artificial layered pnictide superlattices offer the possibility of tailoring the superconducting properties and understanding the mechanism of the superconductivity itself. For high field applications, large critical current densities (Jc) and irreversibility fields (Hirr) are indispensable along all crystal directions. On the other hand, the development of superconducting devices such as tunnel junctions requires multilayered heterostructures. Here we show that artificially engineered undoped Ba-122 / Co doped Ba-122 compositionally modulated superlattices produce ab-aligned nanoparticle arrays. These layer and self-assemble along c-axis aligned defects, and combine to produce very large Jc and Hirr enhancements over a wide angular range. We also demonstrate a structurally modulated SrTiO3 (STO) / Co doped Ba-122 superlattice with sharp interfaces. Success in superlattice fabrication involving pnictides will aid the progress of heterostructured systems exhibiting novel interfacial phenomena and device applications.

cond-mat.supr-con↗

arXiv2013

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers.

cond-mat.mtrl-sci↗

arXiv2013

Atomic clock transitions in silicon-based spin qubits

A major challenge in using spins in the solid state for quantum technologies is protecting them from sources of decoherence. This can be addressed, to varying degrees, by improving material purity or isotopic composition for example, or active error correction methods such as dynamic decoupling, or even combinations of the two. However, a powerful method applied to trapped ions in the context of frequency standards and atomic clocks, is the use of particular spin transitions which are inherently robust to external perturbations. Here we show that such `clock transitions' (CTs) can be observed for electron spins in the solid state, in particular using bismuth donors in silicon. This leads to dramatic enhancements in the electron spin coherence time, exceeding seconds. We find that electron spin qubits based on CTs become less sensitive to the local magnetic environment, including the presence of 29Si nuclear spins as found in natural silicon. We expect the use of such CTs will be of additional importance for donor spins in future devices, mitigating the effects of magnetic or electric field noise arising from nearby interfaces.

quant-ph↗

arXiv2013

Optical Generation of Excitonic Valley Coherence in Monolayer WSe2

Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges ("valleys") to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such valley pseudospins, analogous to that routinely implemented using true spin, in the quest for quantum technologies. Here we show for the first time that SU(2) valley coherence can indeed be generated and detected. Using monolayer semiconductor WSe2 devices, we first establish the circularly polarized optical selection rules for addressing individual valley excitons and trions. We then reveal coherence between valley excitons through the observation of linearly polarized luminescence, whose orientation always coincides with that of any linearly polarized excitation. Since excitons in a single valley emit circularly polarized photons, linear polarization can only be generated through recombination of an exciton in a coherent superposition of the two valleys. In contrast, the corresponding photoluminescence from trions is not linearly polarized, consistent with the expectation that the emitted photon polarization is entangled with valley pseudospin. The ability to address coherence, in addition to valley polarization, adds a critical dimension to the quantum manipulation of valley index necessary for coherent valleytronics.

cond-mat.mes-hall↗

arXiv2012

Field-driven femtosecond magnetization dynamics induced by ultrastrong coupling to THz transients

Controlling ultrafast magnetization dynamics by a femtosecond laser is attracting interest both in fundamental science and industry because of the potential to achieve magnetic domain switching at ever advanced speed. Here we report experiments illustrating the ultrastrong and fully coherent light-matter coupling of a high-field single-cycle THz transient to the magnetization vector in a ferromagnetic thin film. We could visualize magnetization dynamics which occur on a timescale of the THz laser cycle and two orders of magnitude faster than the natural precession response of electrons to an external magnetic field, given by the Larmor frequency. We show that for one particular scattering geometry the strong coherent optical coupling can be described within the framework of a renormalized Landau Lifshitz equation. In addition to fundamentally new insights to ultrafast magnetization dynamics the coherent interaction allows for retrieving the complex time-frequency magnetic properties and points out new opportunities in data storage technology towards significantly higher storage speed.

cond-mat.mtrl-sci↗