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arXiv · 0704.1875

Simulation of Graphene Nanoribbon Field Effect Transistors

G. Fiori·G. Iannaccone
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Abstract

We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibrium Green's Function formalism and a tight-binding hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity on the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires effective nanoribbon width of 1-2 nm, that could be obtained with periodic etching patterns or stress patterns.

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G. Fiori, G. Iannaccone. 2008-01-07. Simulation of Graphene Nanoribbon Field Effect Transistors. https://doi.org/10.1109/led.2007.901680

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