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G. Iannaccone

Publications and source records attributed to G. Iannaccone.

At least 19 recordsLinked to original sources

A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect

We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and the performance dependence on the design parameters through atomistic self-consistent quantum simulations. Our results indicate that the device can provide high ION/IOFF ratios, compatible with electronic applications, albeit biased at ultralow voltages of around 0.1 V.

cond-mat.mes-hall

Water-based and Biocompatible 2D Crystal Inks: from Ink Formulation to All- Inkjet Printed Heterostructures

Fully exploiting the properties of 2D crystals requires a mass production method able to produce heterostructures of arbitrary complexity on any substrate, including plastic. Solution processing of graphene allows simple and low-cost techniques such as inkjet printing to be used for device fabrication. However, available inkjet printable formulations are still far from ideal as they are either based on toxic solvents, have low concentration, or require time-consuming and expensive formulation processing. In addition, none of those formulations are suitable for thin-film heterostructure fabrication due to the re-mixing of different 2D crystals, giving rise to uncontrolled interfaces, which results in poor device performance and lack of reproducibility. In this work we show a general formulation engineering approach to achieve highly concentrated, and inkjet printable water-based 2D crystal formulations, which also provides optimal film formation for multi-stack fabrication. We show examples of all-inkjet printed heterostructures, such as large area arrays of photosensors on plastic and paper and programmable logic memory devices, fully exploiting the design flexibility of inkjet printing. Finally, dose-escalation cytotoxicity assays in vitro also confirm the inks biocompatible character, revealing the possibility of extending use of such 2D crystal formulations to drug delivery and biomedical applications.

cond-mat.mtrl-sci

Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions

We calculate quantum transport for metal-graphene nanoribbon heterojunctions within the atomistic self-consistent Schrödinger/Poisson scheme. Attention is paid on both the chemical aspects of the interface bonding as well the one-dimensional electrostatics along the ribbon length. Band-bending and doping effects strongly influence the transport properties, giving rise to conductance asymmetries and a selective suppression of the subband formation. Junction electrostatics and p-type characteristics drive the conduction mechanism in the case of high work function Au, Pd and Pt electrodes, while contact resistance becomes dominant in the case of Al.

cond-mat.mes-hall

Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies

We present a systematic study of electron backscattering phenomena during conduction for graphene nanoribbons with single-vacancy scatterers and dimensions within the capabilities of modern lithographic techniques. Our analysis builds upon an \textit{ab initio} parameterized semiempirical model that breaks electron-hole symmetry and nonequilibrium Green's function methods for the calculation of the conductance distribution $g$. The underlying mechanism is based on wavefunction localizations and perturbations that in the case of the first $π-π^*$ plateau can give rise to impurity-like pseudogaps with both donor and acceptor characteristics. Confinement and geometry are crucial for the manifestation of such effects. Self-consistent quantum transport calculations characterize vacancies as local charging centers that can induce electrostatic inhomogeneities on the ribbon topology.

cond-mat.mes-hall

Quantum analysis of shot noise suppression in a series of tunnel barriers

We report the results of an analysis, based on a straightforward quantum-mechanical model, of shot noise suppression in a structure containing cascaded tunneling barriers. Our results exhibit a behavior that is in sharp contrast with existing semiclassical models for this particular type of structure, which predict a limit of 1/3 for the Fano factor as the number of barriers is increased. The origin of this discrepancy is investigated and attributed to the presence of localization on the length scale of the mean free path, as a consequence of the strictly 1-dimensional nature of disorder, which does not create mode mixing, while no localization appears in common semiclassical models. We expect localization to be indeed present in practical situations with prevalent 1-D disorder, and the existing experimental evidence appears to be consistent with such a prediction.

cond-mat.mes-hall

Ultra-low-voltage bilayer graphene tunnel FET

In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage, without the limitations in terms of prohibitive lithography and patterning requirements for circuit integration of graphene nanoribbons. Our investigation is based on the solution of the coupled Poisson and Schroedinger equations in three dimensions, within the Non-Equilibrium Green (NEGF) formalism on a Tight Binding Hamiltonian. We show that the small achievable gap of only few hundreds meV is still enough for promising TFET operation, providing a large Ion/Ioff ratio in excess of 10^3 even for a supply voltage of only 0.1 V. Key to this performance is the low quantum capacitance of bilayer graphene, which permits to obtain an extremely small sub-threshold swing S smaller than 20 mV/decade at room temperature.

cond-mat.mes-hall

Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation

In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations. Warm electron injection is characterized by an applied VDS smaller than 3.15 V, so that electrons cannot easily accumulate a kinetic energy larger than the height of the Si/SiO2 barrier. We perform a time-dependent simulation of the program operation where the local gate current density is computed with a continuum-based method and is adiabatically separated from the 2D full Monte Carlo simulation used for obtaining the electron distribution in the phase space. In this way we are able to compute the time evolution of the charge stored in the nitride and of the threshold voltages corresponding to forward and reverse bias. We show that warm electron injection is a viable option for NOR programming in order to reduce power supply, preserve reliability and CMOS logic level compatibility. In addition, it provides a well localized charge, offering interesting perspectives for multi-level and dual bit operation, even in devices with negligible short channel effects.

cond-mat.mes-hall

Study of Warm Electron Injection in Double Gate SONOS by Full Band Monte Carlo Simulation

In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Electrons are accelerated in the channel by a drain-to-source voltage VDS smaller than 3 V, so that programming occurs via electrons tunneling through a potential barrier whose height has been effectively reduced by the accumulated kinetic energy. Particle energy distribution at the semiconductor/oxide interface is studied for different bias conditions and different positions along the channel. The gate current is calculated with a continuum-based post-processing method as a function of the particle distribution obtained from Monte Carlo. Simulation results show that the gate current increases by several orders of magnitude with increasing drain bias and warm electron injection can be an interesting option for programming when short channel effects prohibit the application of larger drain bias.

cond-mat.mes-hall

On the possibility of tunable-gap bilayer graphene FET

We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation. We evaluate device behavior using atomistic simulations based on the self-consistent solution of the Poisson and Schroedinger equations within the NEGF formalism. We show that the concept works, but bandgap opening is not strong enough to suppress band-to-band tunneling in order to obtain a sufficiently large Ion/Ioff ratio for CMOS device operation.

cond-mat.mes-hall

Simulation of Graphene Nanoribbon Field Effect Transistors

We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibrium Green's Function formalism and a tight-binding hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity on the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires effective nanoribbon width of 1-2 nm, that could be obtained with periodic etching patterns or stress patterns.

cond-mat.mes-hall

Analysis of shot noise suppression in mesoscopic cavities in a magnetic field

We present a numerical investigation of shot noise suppression in mesoscopic cavities and an intuitive semiclassical explanation of the behavior observed in the presence of an orthogonal magnetic field. In particular, we conclude that the decrease of shot noise for increasing magnetic field is the result of the interplay between the diameter of classical cyclotron orbits and the width of the apertures defining the cavity. Good agreement with published experimental results is obtained, without the need of introducing fitting parameters.

cond-mat.mes-hall

A Three-dimensional simulation study of the performance of Carbon Nanotube Field Effect Transistors with doped reservoirs and realistic geometry

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution of the 3D Poisson-Schroedinger equation with open boundary conditions, within the Non-Equilibrium Green's Function formalism, where arbitrary gate geometry and device architecture can be considered. The investigation of short channel effects for different gate configurations and geometry parameters shows that double gate devices offer quasi ideal subthreshold slope and DIBL without extremely thin gate dielectrics. Exploration of devices with parallel CNTs show that On currents per unit width can be significantly larger than the silicon counterpart, while high-frequency performance is very promising.

cond-mat.mes-hall

NANOTCAD2D: Two-dimensional code for the simulation of nanoelectronic devices and structures

In this paper we present NANOTCAD2D, a code for the simulation of the electrical properties of semiconductor-based nanoelectronic devices and structures in two-dimensional domains. Such code is based on the solution of the Poisson/Schrödinger equation with density functional theory and of the continuity equation of the ballistic current. NANOTCAD2D can be applied to structures fabricated on III-IV, strained-silicon and silicon-germanium heterostructures, CMOS structures, and can easily be extended to new materials. In particular, in the case of SiGe heterostructures, it computes the effects of strain on the energy band profiles. The effects of interface states at the air/semiconductor interfaces, particularly significant in the case of devices obtained by selective etching, are also properly taken into account.

cond-mat.mes-hall

Thermal behavior of Quantum Cellular Automaton wires

We investigate the effect of a finite temperature on the behavior of logic circuits based on the principle of Quantum Cellular Automata (QCA) and of ground state computation. In particular, we focus on the error probability for a wire of QCA cells that propagates a logic state. A numerical model and an analytical, more approximate, model are presented for the evaluation of the partition function of such a system and, consequently, of the desired probabilities. We compare the results of the two models, assessing the limits of validity of the analytical approach, and provide estimates for the maximum operating temperature.

cond-mat

Operation of Quantum Cellular Automaton cells with more than two electrons

We present evidence that operation of QCA (Quantum Cellular Automaton) cells with four dots is possible with an occupancy of 4N+2 electrons per cell (N being an integer). We show that interaction between cells can be described in terms of a revised formula for cell polarization, which is based only on the difference between diagonal occupancies. We validate our conjectures with full quantum simulations of QCA cells for a number of electrons varying from 2 to 6, using the Configuration-Interaction method.

cond-mat.mes-hall

Modeling and manufacturability assessment of bistable quantum-dot cells

We have investigated the behavior of bistable cells made up of four quantum dots and occupied by two electrons, in the presence of realistic confinement potentials produced by depletion gates on top of a GaAs/AlGaAs heterostructure. Such a cell represents the basic building block for logic architectures based on the concept of Quantum Cellular Automata (QCA) and of ground state computation, which have been proposed as an alternative to traditional transistor-based logic circuits. We have focused on the robustness of the operation of such cells with respect to asymmetries deriving from fabrication tolerances. We have developed a 2-D model for the calculation of the electron density in a driven cell in response to the polarization state of a driver cell. Our method is based on the one-shot Configuration-Interaction technique, adapted from molecular chemistry. From the results of our simulations, we conclude that an implementation of QCA logic based on simple ``hole-arrays'' is not feasible, because of the extreme sensitivity to fabrication tolerances. As an alternative, we propose cells defined by multiple gates, where geometrical asymmetries can be compensated for by adjusting the bias voltages. Even though not immediately applicable to the implementation of logic gates and not suitable for large scale integration, the proposed cell layout should allow an experimental demonstration of a chain of QCA cells.

cond-mat

Simulation of a non-invasive charge detector for quantum cellular automata

Information in a Quantum Cellular Automata architecture is encoded in the polarizazion state of a cell, i.e., in the occupation numbers of the quantum dots of which the cell is made up. Non-invasive charge detectors of single electrons in a quantum dot are therefore needed, and recent experiments have shown that a quantum constriction electrostatically coupled to the quantum dot may be a viable solution. We have performed a numerical simulation of a system made of a quantum dot and a nearby quantum point contact defined, by means of depleting metal gates, in a two-dimensional electron gas at a GaAs/AlGaAs heterointerface. We have computed the occupancy of each dot and the resistance of the quantum wire as a function of the voltage applied to the plunger gate, and have derived design criteria for achieving optimal sensitivity.

cond-mat

Enhanced shot noise in resonant tunneling: theory and experiment

We show that shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ``full'' shot noise. We provide experimental results showing a Fano factor up to 6.6, and show that it is a dramatic effect caused by electron-electron interaction through Coulomb force, enhanced by the particular shape of the density of states in the well. We also present numerical results from the proposed theory, which are in agreement with the experiment, demonstrating that the model accounts for the relevant physics involved in the phenomenon.

cond-mat.str-el