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arXiv · 0704.2028

Bound hole states in a ferromagnetic (Ga,Mn)As environment

M. J. Schmidt·K. Pappert·C. Gould·G. Schmidt·R. Oppermann·L. W. Molenkamp
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Abstract

A numerical technique is developed to solve the Luttinger-Kohn equation for impurity states directly in k-space and is applied to calculate bound hole wave functions in a ferromagnetic (Ga,Mn)As host. The rich properties of the band structure of an arbitrarily strained, ferromagnetic zinc-blende semiconductor yields various features which have direct impact on the detailed shape of a valence band hole bound to an active impurity. The role of strain is discussed on the basis of explicit calculations of bound hole states.

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M. J. Schmidt, K. Pappert, C. Gould, G. Schmidt, R. Oppermann, L. W. Molenkamp. 2007-04-16. Bound hole states in a ferromagnetic (Ga,Mn)As environment. https://doi.org/10.1103/physrevb.76.035204

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