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arXiv · 0704.3487

Quantum Hall Effect in a Graphene p-n Junction

J. R. Williams·L. DiCarlo·C. M. Marcus
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Abstract

We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate. A functionalized Al203 oxide that adheres to graphene and does not significantly affect its electronic properties is described. Measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and 3/2 times the quantum of conductance, e2/h, consistent with theory.

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J. R. Williams, L. DiCarlo, C. M. Marcus. 2007-08-28. Quantum Hall Effect in a Graphene p-n Junction. https://arxiv.org/abs/0704.3487

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