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arXiv · 0705.0105

Influence of growth parameters on structural properties and bandgap of InN epilayers deposited in a showerhead MOVPE system

Abdul Kadir·Tapas Ganguli·Ravi Kumar·M. R. Gokhale·A. P. Shah·B. M. Arora·Arnab Bhattacharya
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Abstract

From a detailed analysis of InN epilayers deposited in a close-coupled showerhead metalorganic vapour phase epitaxy (MOVPE) system under various conditions we investigate the effect of growth parameters on the lattice constants of the InN layer. The layers are under significant internal hydrostatic stress which influences the optical properties. Samples typically fall into two broad categories of stress, with resultant luminescence emission around 0.8eV and 1.1eV. We can correlate the internal stress in the layer and the value of the optical absorption edge, and the PL emission wavelength.

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Abdul Kadir, Tapas Ganguli, Ravi Kumar, M. R. Gokhale, A. P. Shah, B. M. Arora, Arnab Bhattacharya. 2007-05-01. Influence of growth parameters on structural properties and bandgap of InN epilayers deposited in a showerhead MOVPE system. https://arxiv.org/abs/0705.0105

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