Terahertz Parametric Gain in Semiconductor Superlattices

Timo Hyart; Alexey V. Shorokhov; Kirill N. Alekseev

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arXiv · 0706.2967

Terahertz Parametric Gain in Semiconductor Superlattices

Timo Hyart·Alexey V. Shorokhov·Kirill N. Alekseev

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Abstract

We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. Action of ac electric field causes oscillations of electron's effective mass in miniband, which result in a parametric resonance. We have established a theoretical feasibility of phase-sensitive parametric amplification at the resonance. The parametric amplification does not require operation in conditions of negative differential conductance. Therefore a formation of destructive domains of high electric field inside the superlattice can be prevented. Here we concentrate on the parametric up- and down-conversion of electromagnetic radiation from available frequencies to desirable THz frequency range.

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Timo Hyart, Alexey V. Shorokhov, Kirill N. Alekseev. 2007-06-20. Terahertz Parametric Gain in Semiconductor Superlattices. https://arxiv.org/abs/0706.2967

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