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arXiv · 0709.0692

Thickness-dependence of the electronic properties in V2O3 thin films

C. Grygiel·Ch. Simon·B. Mercey·W. Prellier·P. Limelette·R. Fresard
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Abstract

High quality vanadium sesquioxide V2O3 films (170-1100 Å) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive lattice parameter (a), close to -3.5% with respect to the substrate and an out-of-plane tensile lattice parameter (c) . The thin film samples display metallic character between 2-300 K, and no metal-to-insulator transition is observed. At low temperature, the V2O3 films behave as a strongly correlated metal, and the resistivity (ρ) follows the equation ρ=ρ_0 + A T^2, where A is the transport coefficient in a Fermi liquid. Typical values of A have been calculated to be 0.14 μΩcm K^{-2}, which is in agreement with the coefficient reported for V2O3 single crystals under high pressure. Moreover, a strong temperature-dependence of the Hall resistance confirms the electronic correlations of these V2O3 thin films samples.

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C. Grygiel, Ch. Simon, B. Mercey, W. Prellier, P. Limelette, R. Fresard. 2007-09-05. Thickness-dependence of the electronic properties in V2O3 thin films. https://doi.org/10.1063/1.2824465

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