arXiv · 0709.1415
Predicting the Ionization Threshold for Carriers in Excited Semiconductors
Abstract
A simple set of formulas is presented which allows prediction of the fraction of ionized carriers in an electron-hole-exciton gas in a photoexcited semiconductor. These results are related to recent experiments with excitons in single and double quantum wells.
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David Snoke. 2007-09-10. Predicting the Ionization Threshold for Carriers in Excited Semiconductors. https://doi.org/10.1016/j.ssc.2008.01.012
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