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arXiv · 0709.2392

Growth and optical properties of self-assembled InGaAs Quantum Posts

H. J. Krenner·C. Pryor·J. He·J. P. Zhang·Y. Wu·C. M. Morris·M. S. Sherwin·P. M. Petroff
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Abstract

We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band k.p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments.

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H. J. Krenner, C. Pryor, J. He, J. P. Zhang, Y. Wu, C. M. Morris, M. S. Sherwin, P. M. Petroff. 2008-01-19. Growth and optical properties of self-assembled InGaAs Quantum Posts. https://doi.org/10.1016/j.physe.2007.09.165

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