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arXiv · 0710.0518

Self-directed growth of AlGaAs core-shell nanowires for visible light applications

C. Chen·S. Shehata·C. Fradin·R. LaPierre·C. Couteau·G. Weihs
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Abstract

Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core-shell structure formed during the growth as a consequence of the different Al and Ga adatom diffusion lengths.

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C. Chen, S. Shehata, C. Fradin, R. LaPierre, C. Couteau, G. Weihs. 2007-10-02. Self-directed growth of AlGaAs core-shell nanowires for visible light applications. https://doi.org/10.1021/nl070874k

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