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arXiv · 0710.4178

Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films

J. Y. Jo·S. M. Yang·H. S. Han·D. J. Kim·W. S. Choi·T. W. Noh·T. K. Song·J. -G. Yoon·C. -Y. Koo·J. -H. Cheon·S. -H. Kim
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Abstract

We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [Refer to J. Y. Jo et al., Phys. Rev. Lett. (in press)]. Based on this analysis, we found that the Zr ion-substitution for Ti ions would induce broad distributions in the local field due to defect dipoles, which makes the ferroelectric domain switching occur more easily.

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J. Y. Jo, S. M. Yang, H. S. Han, D. J. Kim, W. S. Choi, T. W. Noh, T. K. Song, J. -G. Yoon, C. -Y. Koo, J. -H. Cheon, S. -H. Kim. 2007-11-21. Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films. https://doi.org/10.1063/1.2824839

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