arXiv subjects

S. M. Yang

Publications and source records attributed to S. M. Yang.

12 recordsLinked to original sources

arXiv2026

Improved n=1 Empirical Error Field Penetration Threshold Scaling with Ohmic and L-Mode Conventional Tokamak Plasma Discharges

This paper presents an updated n=1 error field penetration threshold scaling, which increases fit quality compared to previous error field scaling laws, is produced from an expanded database, and exhibits reduced uncertainty in projections to future conventional tokamaks. It improves confidence in tokamak engineering tolerances, which are a significant driver of cost and time constraints on device construction. We add J-TEXT data, new JET data, and create the scaling using only conventional tokamak Ohmic and L-mode experiments. Since H-mode plasmas are more resilient to error field penetration, this scaling predicts what is likely the most dangerous regime of error field penetration for new tokamak designs. These decisions improve confidence in the error field penetration threshold scaling and its application in the construction and design decisions of any future conventional tokamak or FPP.

physics.plasm-ph↗

arXiv2026

Comparison of plasma response models for RMP effects on the divertor and scrape-off layer in KSTAR

Resonant magnetic perturbations (RMPs) are beneficial for control of edge localized modes (ELMs) in tokamaks. Nevertheless, a side effect is the appearance of a helical striations in the particle and heat loads onto divertor targets. The extent and field line connection of these striations is significantly altered by the plasma response to external perturbations. For an ELM suppressed H-mode plasma at KSTAR, magnetic footprints are computed by FLARE based on plasma response from GPEC, MARS-F, M3D-C1 and JOREK with substantial differences in the resulting footprints (from 2 cm to 14 cm). This is reflected in EMC3-EIRENE simulations of the resulting heat loads: it is found that either the peak value or the extent of the striations appear to be overestimated compared to IRTV measurements. Reasonable agreement can only be achieved for the smallest footprint for lower input power and lower cross-field transport, or for higher upstream density and radiative power losses.

physics.plasm-ph↗

arXiv2025

Control of pedestal-top electron density using RMP and gas puff at KSTAR

We report the experimental results of controlling the pedestal-top electron density by applying resonant magnetic perturbation with the in-vessel control coils and the main gas puff in the 2024-2025 KSTAR experimental campaign. The density is reconstructed using a parametrized psi_N grid and the five channels of the line-averaged density measured by a two-colored interferometer. The reconstruction procedure is accelerated by deploying a multi-layer perceptron to run in about 120 microseconds and is fast enough for real-time control. A proportional-integration controller is adopted, with the controller gains being estimated from the system identification processes. The experimental results show that the developed controller can follow a dynamic target while exclusively using both actuators. The absolute percentage errors between the electron density at psi_N=0.89 and the target are approximately 1.5% median and a 2.5% average value. The developed controller can even lower the density by using the pump-out mechanism under RMP, and it can follow a more dynamic target than a single actuator controller. The developed controller will enable experimental scenario exploration within a shot by dynamically setting the density target or maintaining a constant electron density within a discharge.

physics.plasm-ph↗

arXiv2024

Heuristic predictions of RMP configurations for ELM suppression in ITER burning plasmas and their impact on divertor performance

A subspace of resonant magnetic perturbation (RMP) configurations for edge localized mode (ELM) suppression is predicted for H-mode burning plasmas at 15 MA current and 5.3 T magnetic field in ITER. Perturbation of the core plasma can be reduced by a factor of 2 for equivalent edge stability proxies, while the perturbed plasma boundary geometry remains mostly resilient. The striation width of perturbed field lines connecting from the main plasma (normalized poloidal flux $< 1$) to the divertor targets is found to be significantly larger than the expected heat load width in the absence of RMPs. This facilitates heat load spreading with peak values at an acceptable level below 10 MW m${}^{-2}$ on the outer target already at moderate gas fueling and low Ne seeding for additional radiative dissipation of the 100 MW of power into the scrape-off layer (SOL). On the inner target, however, re-attachment is predicted away from the equilibrium strike point due to increased upstream heat flux, higher downstream temperature and less efficient impurity radiation.

physics.plasm-ph↗

arXiv2011

Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO3(001) films

Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted in the vertical lattice mismatch between adjacent BiFeO3 layers, which induced the strain relaxation and crystallographic tilt. The step bunching was confirmed by the increased terrace width on the BiFeO3 surface.

cond-mat.mtrl-sci↗

arXiv2010

Unveiling the ac Dynamics of Ferroelectric Domains by Investigating the Frequency Dependence of Hysteresis Loops

We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally activated creep motion at lower frequencies, and by viscous flow motion at higher frequencies. The dynamic crossover between the creep and flow regimes unveils two frequency-dependent scaling regions of hysteresis loops. Based on these findings, we constructed a dynamic phase diagram for hysteretic ferroelectric domain dynamics in the presence of ac fields.

cond-mat.mtrl-sci↗

arXiv2010

Epitaxial growth of multiferroic Pb(Zr0.57Ti0.43)O3-Pb(Fe2/3W1/3)O3 solid-solution thin films and their magnetoelectric effects

We report on epitaxial growth of single-phase [Pb(Zr0.57Ti0.43)O3]0.8[Pb(Fe2/3W1/3)O3]0.2 (PZT-PFW) solid-solution thin films using pulsed laser deposition. X-ray diffraction measurements reveal that the films have a tetragonal structure. The films exhibit ferroelectric properties and weak ferromagnetic responses at room temperature. Magnetoelectric effects were investigated; the nonlinear magnetoelectric coefficient was measured and found to be comparable to those of multiferroic hexagonal manganites, but at least two orders of magnitude smaller than that for polycrystalline PZT-PFW films.

cond-mat.mtrl-sci↗

arXiv2009

Electric-field-controlled directional growth of ferroelectric domains in multiferroic BiFeO3 films

We describe the directional growth of ferroelectric domains in a multiferroic BiFeO3 thin film, which was grown epitaxially on a vicinal (001) SrTiO3 substrate. A detailed structural analysis of the film shows that a strain gradient, which can create a symmetry breaking in a ferroelectric double well potential, causes ferroelectric domains to grow with preferred directionality under the influence of an electric field. Our results suggest the possibility of controlling the direction of domain growth with an electric field by imposing constraints on ferroelectric films, such as a strain gradient.

cond-mat.mes-hall↗

arXiv2009

Nonlinear Dynamics of Domain Wall Propagation in Epitaxial Ferroelectric Thin Films

We investigated the ferroelectric domain wall propagation in epitaxial Pb(Zr,Ti)O3 thin films over a wide temperature range (3 - 300 K). We measured the domain wall velocity under various electric fields and found that the velocity data is strongly nonlinear with electric fields, especially at low temperature. We found that, as one of surface growth problems, our domain wall velocity data from ferroelectric epitaxial film could be classified into the creep, depinning, and flow regimes due to competition between disorder and elasticity. The measured values of velocity and dynamical exponents indicate that the ferroelectric domain walls in the epitaxial films are fractal and pinned by a disorder-induced local field.

cond-mat.mtrl-sci↗

arXiv2008

Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy

We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v, obtained under applied electric field (Eapp),showed creep behavior: i.e. ~ exp(-E0/Eapp)^$μ$ with an exponent $μ$ of 0.9 $\pm$ 0.1 and an activation field E0 of about 700 kV/cm.

cond-mat.mtrl-sci↗

arXiv2007

Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films

We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [Refer to J. Y. Jo et al., Phys. Rev. Lett. (in press)]. Based on this analysis, we found that the Zr ion-substitution for Ti ions would induce broad distributions in the local field due to defect dipoles, which makes the ferroelectric domain switching occur more easily.

cond-mat.mtrl-sci↗

arXiv2007

Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors

We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarization switching process and observed that domain nucleation occurs at particular sites. This inhomogeneous nucleation process should play an important role in an early stage of switching and under a high electric field. We found that the number of nuclei is linearly proportional to log(switching time), suggesting a broad distribution of activation energies for nucleation. The nucleation sites for a positive bias differ from those for a negative bias, indicating that most nucleation sites are located at ferroelectric/electrode interfaces.

cond-mat.mtrl-sci↗