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arXiv · 0711.3206

Shot Noise in Graphene

L. DiCarlo·J. R. Williams·Yiming Zhang·D. T. McClure·C. M. Marcus
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Abstract

We report measurements of current noise in single- and multi-layer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multi-layer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theoretical predictions for shot noise in ballistic and disordered graphene.

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L. DiCarlo, J. R. Williams, Yiming Zhang, D. T. McClure, C. M. Marcus. 2008-02-21. Shot Noise in Graphene. https://doi.org/10.1103/physrevlett.100.156801

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