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arXiv · 0801.3351

Multi-layer atom chips for versatile atom micro manipulation

Martin Trinker·Sönke Groth·Stefan Haslinger·Stephanie Manz·Thomas Betz·Israel Bar-Joseph·Thorsten Schumm·Jörg Schmiedmayer
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Abstract

We employ a combination of optical UV- and electron-beam-lithography to create an atom chip combining sub-micron wire structures with larger conventional wires on a single substrate. The new multi-layer fabrication enables crossed wire configurations, greatly enhancing the flexibility in designing potentials for ultra cold quantum gases and Bose-Einstein condensates. Large current densities of >6 x 10^7 A/cm^2 and high voltages of up to 65 V across 0.3 micron gaps are supported by even the smallest wire structures. We experimentally demonstrate the flexibility of the next generation atom chip by producing Bose-Einstein condensates in magnetic traps created by a combination of wires involving all different fabrication methods and structure sizes.

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Martin Trinker, Sönke Groth, Stefan Haslinger, Stephanie Manz, Thomas Betz, Israel Bar-Joseph, Thorsten Schumm, Jörg Schmiedmayer. 2008-01-22. Multi-layer atom chips for versatile atom micro manipulation. https://doi.org/10.1063/1.2945893

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