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arXiv · 0803.3464

Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors

Xinran Wang·Yijian Ouyang·Xiaolin Li·Hailiang Wang·Jing Guo·Hongjie Dai
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Abstract

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as ~2000uA/um. We estimated carrier mobility ~200cm2/Vs and scattering mean free path ~10nm in sub-10nm GNRs. Scattering mechanisms by edges, acoustic phonon and defects are discussed. The sub-10nm GNRFETs are comparable to small diameter (d<=~1.2nm) carbon nanotube FETs with Pd contacts in on-state current density and Ion/Ioff ratio, but have the advantage of producing all-semiconducting devices.

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Xinran Wang, Yijian Ouyang, Xiaolin Li, Hailiang Wang, Jing Guo, Hongjie Dai. 2008-05-03. Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors. https://doi.org/10.1103/physrevlett.100.206803

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