arXiv · 0804.0378
GaAs photonic crystal cavity with ultra-high Q: microwatt nonlinearity at 1.55 $μ$m
Abstract
We have realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys.Lett., \textbf{88}, 041112, (2006)]. We measure a quality factor Q=700,000, which proves that ultra-high Q nanocavities are also feasible in GaAs. We show that, due to larger two-photon absorption (TPA) in GaAs, nonlinearities appear at the microwatt-level and will be more functional in gallium arsenide than in silicon nanocavities.
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Sylvain Combrie', Alfredo De Rossi, Quynh Vy Tran, Henri Benisty. 2008-06-26. GaAs photonic crystal cavity with ultra-high Q: microwatt nonlinearity at 1.55 $μ$m. https://doi.org/10.1364/ol.33.001908
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